VAPOR-PHASE EPITAXIAL GROWTH METHOD AND VAPOR-PHASE EPITAXY APPARATUS

摘要

A vapor-phase epitaxial growth method and apparatus is provided to make uniform a thickness of an epitaxially grown semiconductor layer by equalizing flow of a gas from a path onto a wafer. A vapor-phase epitaxial growth apparatus has a support table positioned in a chamber(120) for holding a substrate(101), a first flow path supplying a process gas on the substrate and a second flow path exhausting the gas. The substrate is rotated, and the process gas and a carrier gas are supplied to form a semiconductor film on the substrate. When the semiconductor film is formed on the substrate, flow rates and concentrations of the process gas and the carrier gas, a degree of vacuum within the chamber, a temperature of the substrate, and a rotation speed of the substrate are controlled to make uniform a film thickness of the semiconductor layer.