Thermal conductivity of Si_(1-x)Ge_x/Si_(1-y)Ge_y, superlattices: Competition between interfacial and internal scattering

摘要

We investigate thermal transport in Si/Ge and Si_(1-x)Ge_x/Si_(1-y)Ge_y alloy superlattices based on solving the single-mode phonon Boltzmann transport equation in the relaxation-time approximation and with full phonon dispersions. We derive an effective interface scattering rate that depends both on the interface roughness (captured by a wave-vector-dependent specularity parameter) and on the efficiency of internal scattering mechanisms (mass-difference and phonon-phonon scattering). We provide compact expressions for the calculations of in-plane and cross-plane thermal conductivities in superlattices. Our numerical results accurately capture both the observed increase in thermal conductivity as the superlattice period increases and the in-plane vs cross-plane anisotropy of thermal conductivity. Owing to the combined effect of interface and internal scattering, an alloy/alloy superlattice has a lower thermal conductivity than bulk SiGe with the same alloy composition. Thermal conductivity can be minimized by growing short-period alloy/alloy superlattices or Si/Si_(1-x)Ge_x, superlattices with the SiGe layer thicker than the Si one.