Self-modulation doping effect in the high-mobility layered semiconductor Bi_2O_2Se

摘要

Recently, an air-stable layered semiconductor Bi_2O_2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes Bi_2O_2Se from other semiconductors. We found that the electron donor states lie above the lowest conduction band. Thus, electrons gel spontaneously ionized from donor sites (e.g.. Se vacancies) without involving the thermal activation, different from the donor ionization in conventional semiconductors. Consequently, the resistance decreases as reducing the temperature as observed in our measurement, which is similar to a metal but contrasts to a usual semiconductor. Furthermore, the electron conduction channels locate spatially away from ionized donor defects (Se vacancies) in different van der Waals layers. Such a spatial separation can strongly suppress the scattering caused by donor sites and subsequently increase the electron mobility, especially at the low temperature. We call this high-mobility mechanism self-modulation doping, i.e., the modulation doping spontaneously happening in a single-phase material without requiring a heterojunction. Our work paves a way to design high-mobility semiconductors with layered materials.