首页> 中文期刊> 《无机材料学报》 >Zn2+掺杂诱导Eu3+激活BiOCl层状半导体的反常发光性能研究

Zn2+掺杂诱导Eu3+激活BiOCl层状半导体的反常发光性能研究

         

摘要

Eu3+-activated BiOCl layered phosphors induced by doping Zn2+ were prepared by traditional solid reaction method, and the effect of Zn2+ ion dopants (0-20mol%) on the photoluminescence properties were characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), Fourier transform infrared absorption (FT-IR), excitation and emission spectra, and luminescence decay curves meas-urement. It is found that increase of concentration of Zn2+ ion dopants almost has no influence on the structure of BiOCl crystals but decreases the emission intensity of Eu3+ ion at first and then increases it, accompanying with con-tinually enhancing luminescence lifetime of Eu3+ ions. The comparative experiments suggest that this results are in-volved in special layered structure of BiOCl semiconductor. Zn2+ ions would be incorporated into interlayer space of the BiOCl layered crystals when the concentration of Zn2+ ions≤10%. Then, Zn2+ ions tend to incorporate into crystal lattices by substituting Bi3+ ions. Different doping mechanism of Zn2+ may change Eu3+ lifetime and modify energy transfer efficiency from the host, leading to above emission behavior of Eu3+ ion dopants. The result is helpful to im-prove performance of novel red Eu3+ doped BiOCl phosphor and to understand emission property of rare earth ion in layered phosphors.%采用固相法在500℃下成功制备Zn2+掺杂BiOCl:Eu3+层状半导体,并研究了Zn2+(0~20mol%)掺杂对Eu3+激活BiOCl层状半导体发光性能的影响.利用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电镜(SEM)、傅里叶变换红外光谱(FT-IR)、激发–发射光谱、荧光寿命衰减曲线对样品的结构和性能进行表征.研究发现,随Zn2+掺杂浓度增大,BiOCl晶体结构不变,Eu3+荧光寿命延长,但发光强度却出现先减后增的反常现象.综合分析表明这可能与BiOCl特殊的层状结构有关.通过XRD和XPS的表征可以推断:当Zn2+掺杂浓度≤10mol%,Zn2+在BiOCl中掺杂方式以晶胞层间隙掺杂为主;当Zn2+掺杂浓度>10mol%后,掺杂方式逐渐向取代掺杂转变.两种掺杂机制对Eu3+荧光寿命的改变以及形成缺陷对基质能量传递效率的影响可能是形成上述反常现象的主要原因.研究结果有助于认识稀土掺杂层状半导体的发光性能及影响规律,并对Eu3+掺杂BiOCl这类新型发光材料的开发设计具有指导意义.

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