Asymmetric Resistive Switching Effect in Au/Nb:SrTiO_3 Schottky Junctions

摘要

Asymmetric resistive switching processes are observed in Au/Nb:SrTiO3(NSTO) Schottky junctions. The SET transition from high- to low-resistancestate occurs at 10 ns under +2 to +5 V bias, while the RESET transition fromlow- to high- resistance state occurs at 10~4 to 10~7 ns under -2 to -5 V bias.A model of electron trapping/detrapping coupled with the migration ofoxygen vacancies toward/away from Au/NSTO Schottky junction interfaceis proposed to understand this fast SET and slow RESET process. This fastSET and slow RESET switch may have potential applications in some specialregions.