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Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making
Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making
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机译:具有混合肖特基/ pn结的不对称源漏场效应晶体管及其制造方法
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摘要
The present invention is related to microelectronic device technologies. A method for making an asymmetric source-drain field-effect transistor is disclosed. A unique asymmetric source-drain field-effect transistor structure is formed by changing ion implantation tilt angles to control the locations of doped regions formed by two ion implantation processes. The asymmetric source-drain field-effect transistor has structurally asymmetric source/drain regions, one of which is formed of a P-N junction while the other one being formed of a mixed junction, the mixed junction being a mixture of a Schottky junction and a P-N junction.
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