An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

摘要

A Ag/melanin/SS memristive device with remarkably good endurance andretention properties is demonstrated using natural melanin isolated frombacterium Aeromonas sp. SNS. Purified and characterized melanin is used for thedevelopment of a non-volatile memory device. The device is operated underelectroforming-free mode and requires only ±0.6 V resistive switching voltage.2×10~4 switching cycles endurance is achieved with an approximately 10Xmemory window at 0.2 V read voltage. In addition to this, the low resistance state(LRS) and high resistance state (HRS) are stable over 10~3 s without any observabledegradation in the resistance states. Standard deviation and coefficient ofvariation of LRS and HRS are very small compared to other memory devicesreported in the literature. Furthermore, the Ag/melanin/SS memristive deviceshows rich nonlinear behavior and possesses negative differential resistance effectduring positive bias. Charge transportation in the device is due to the ohmic andspace charge limited current. The formation and breaking of the conductivefilament are responsible for the bipolar resistive switching effect due to hybridelectronic-ionic charge transportation. Rich Ⅰ–Ⅴ characteristics, very low switchingvoltage, and remarkable nonvolatile memory performance make melanin a strongcandidate for next generation organic non-volatile memory devices.