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首页> 外文期刊>Physica Status Solidi. A, Applied Research >Secondary electron emission of an insulating target induced by a well-focused electron beam - Monte Carlo simulation study
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Secondary electron emission of an insulating target induced by a well-focused electron beam - Monte Carlo simulation study

机译:聚焦电子束诱导的绝缘靶的二次电子发射-蒙特卡洛模拟研究

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摘要

The secondary electron emission of an insulating target bombarded by an electronic beam varies as the sample charges up. This evolution is most often described via the conventional approach. However this latter is far from being entirely satisfactory and several observations obviously take it at fault. One can then wonder which parameters play the leading role in the emission. To study this, we have developed a Monte Carlo simulation of the electron trajectories where the trace of all the charge carriers implied in the interaction of the electronic beam with the insulator can be followed. These moving charges can trap in the material after they have lost most part of their energy or they can be emitted at the surface. The simulations carried out in cases where the sample charges either positively or negatively indicate that the in-charge secondary emission curve does not generally follow that deduced from the conventional approach. We explain this difference by the influence of the internal electric field developed in the target during the charge and, consequently, by the physical characteristics of the trapping sites present in the sample. So, the characteristics of the secondary emission are mainly governed by the ability of the material to trap charges of and by the probability of relaxation of part of these charges under the influence of the internal field. (C) 2004 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.
机译:电子束轰击的绝缘靶的二次电子发射随样品充电而变化。这种演变最常通​​过常规方法来描述。然而,后者远非完全令人满意,并且一些观察结果显然将其归咎于此。然后,人们可能会怀疑哪些参数在排放中起主导作用。为了研究这一点,我们开发了电子轨迹的蒙特卡洛模拟,可以追踪电子束与绝缘子相互作用所隐含的所有电荷载流子的轨迹。这些移动的电荷失去了大部分能量后便会捕获在材料中,或者会在表面发射出去。在样品带正电或负电的情况下进行的模拟表明,带电二次发射曲线通常不遵循常规方法得出的曲线。我们通过在充电过程中靶材内部产生的内部电场的影响来解释这种差异,因此,通过样品中存在的俘获位点的物理特征来解释这种差异。因此,二次发射的特性主要取决于材料捕获电荷的能力以及内部电场影响下这些电荷的一部分松弛的可能性。 (C)2004 WILEY-VCH Vertag GmbH&Co. KGaA,Weinheim。

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