Resistance switching properties of epitaxial Pr_(0.7)Ca_(0.3)MnO_3 thin films with different electrodes

摘要

Resistance switching effect caused by external electric field was investigated in Pr_(0.7)Ca_(0.3)MnO_3 (PCMO) thin films grown on (001)-oriented LaAlO_3, by using different metallic (Al, Pt, Au. Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistancernchanges upon reversing voltage polarities. Nonlinear, hysteretic current-voltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in non-volatile memory devices.