Resistive switching properties of high crystallinity and low-resistance Pr_(0.7)Ca_(0.3)MnO_3 thin film with point-contacted Ag electrodes

摘要

A high-crystallinity, low-resistance Pr_(0.7)Ca_(0.3)MnO_3(PCMO) thin film deposited by sputtering at 600 ℃ showed no resistive switching with a Pt/Pr_(0.7)Ca_(0.3)MnO_3/Pt structure but a remarkable bipolar resistive switching with a Ag paste/Pr_(0.7)Ca_(0.3)MnO_3/Pt structure. Observed retention fatigue of the low-resistance state was almost saturated after 24 h. The resistive switching properties were characterized as point contact of Ag grains to PCMO thin film. It was also found that the interface can form interfacial trap states and resistive change active layers. This strongly suggests that the function of the Ag point contact is similar to those of the previously proposed filament path and the nanodomain switch.