Optical output power-dependent degradation mechanism of 445 nm InGaN blue laser

摘要

The degradation characteristics of InGaN-based blue laser diodes (LDs) are investigated at an emission wavelength of 445 nm. Two different LDs are used to determine the distinct failure characteristics with mirror reflectivities of 54% and 78%. Blue LDs are operated with the same current injection during a 1000 h reliability test. Each LD gives an outputrnpower of 100 mW and 50 mW at reflectivities of 54% and 78%, respectively. A slight threshold current increase is observed after 1000 h of aging at 50 mW, while the slope efficiency remains constant at its initial level before aging. At 100 mW, the slope efficiency (threshold current) increases 25% (100%) compared to values before aging.