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Effect of the magnetization process on low-field microwave absorption by FeBN magnetic thin film

机译:磁化过程对FeBN磁性薄膜低场微波吸收的影响

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The magnetization process of a typical soft magnetic film was examined using ferromagnetic resonance (FMR) measurements on 9.84 GHz. A 500-nm-thick Fe_(85.9)B_(2.6)N_(11.5) film with in-plane uniaxial magnetic anisotropy was deposited by RF sputtering. The saturation magnetization and coercivity of the FeBN magnetic film were 17.3 kG and 2.4 Oe, respectively, at the hard direction. The microwave absorption signals showed two different absorption peaks: small signals at a near zero dc field and at a high dc field. The resonance magnetic fields for the major and minor peaks were observed at 532 and 604 Oe, respectively. The g-factor obtained was 2.15. The uniaxial magnetic anisotropy field was approximately 14 Oe by vibrating sample magnetometer, which coincided with that of the FMR results. The absorption at a low-field revealed different characteristics from those of conventional FMR absorption. The magnetic anisotropy field obtained by low-field microwave absorption was approximately 13.5 Oe, which is comparable to that of the FMR and VSM results.
机译:使用9.84 GHz的铁磁共振(FMR)测量结果检查了典型软磁膜的磁化过程。通过RF溅射沉积具有面内单轴磁各向异性的500nm厚的Fe_(85.9)B_(2.6)N_(11.5)膜。 FeBN磁性膜在硬方向上的饱和磁化强度和矫顽力分别为17.3 kG和2.4 Oe。微波吸收信号显示出两个不同的吸收峰:接近零直流场和高直流场的小信号。主峰和次峰的共振磁场分别在532和604 Oe处观察到。获得的g因子为2.15。振动样品磁强计测得的单轴磁各向异性场约为14 Oe,与FMR结果相符。低场的吸收显示出与常规FMR吸收不同的特性。通过低场微波吸收获得的磁各向异性场约为13.5 Oe,与FMR和VSM结果的磁各向异性场相当。

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