Defects in N~+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

摘要

High quality ZnO single crystals of dimensions 10 × 10 × 0.5 mm~3, grown by a hydrothermal approach, have been implanted by 40 keV N~+ ions to a fluence of 1 × 10~(15) cm~2 at room temperature. Their properties revealed by positron annihilation and Hall effect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 ℃ and 500 ℃.