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Er~(3+) induced point defects in ZnO and impact of Li~+/Na~+/K~+ on the vacancy defects in ZnO:Er studied by positron annihilation spectroscopy

机译:ZnO中Er〜(3+)引起的点缺陷以及Li〜+ / Na〜+ / K〜+对ZnO:Er中空位缺陷的影响

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摘要

The defects species in as-prepared ZnO, Er-doped, and co-doped (with Li/Na/K) nanocrystallites synthesized by combustion method were examined by Positron Annihilation Lifetime (PAL) and Doppler Broadening (DB) spectroscopy. The S and W parameters were derived from positron trapping of valence and core electrons extracted from the central and wing regions of DB spectra to identify the vacancy-type defects. For as-prepared Er-doped ZnO samples, the observed high value of S indicated that the vacancies and vacancy cluster defects were located at the grain surface and two-grain junction. With co-doping of Li/Na/K, theS value was decreased due to the dopant occupying the vacancy clusters. On annealing, the major recovery of such defects was observed with enormous decreasing S for Li co-doped sample. Positron lifetime variations signified the presence of defects compared with bulk ZnO. Er doping in ZnO evidenced a small increase of defects with a gradual decrease when co-doped with Li/Na/K indicating the co-dopant impurity occupied the vacancies in the grain boundary. The first lifetime component of 193ps owing to the Zn-type vacancies in as-prepared ZnO were increased on Er doping, evidencing the replacement of the Zn2+ by Er3+ ion and thereby created point defects due to charge compensation. On annealing to 800 degrees C, Li co-doped ZnO:Er resulted to enormous reduction of second lifetime tau(2), mean lifetime tau(ave), and S value signifying the Li ion localised in Zn vacancy site. Annealed ZnO:Er+Na/K resulted in considerable intensification in defect concentrations than ZnO:Er+Li due to the vacancy migration to form as clusters. The defect type, defect modification, the influence of Er together with co-doped Li/Na/K in ZnO, and their effect on annealing are elucidated in detail from the positron annihilation characteristics.
机译:通过正电子An没寿命(PAL)和多普勒展宽(DB)光谱检查了燃烧方法合成的制备的ZnO,Er掺杂和共掺杂(与Li / Na / K)纳米晶体中的缺陷种类。 S和W参数是从正电子俘获价和从DB光谱的中央和侧翼区域提取的核心电子得出的,以识别空位型缺陷。对于制备的掺Er的ZnO样品,观察到的高S值表明空位和空位簇缺陷位于晶粒表面和两晶粒结。随着Li / Na / K的共掺杂,由于掺杂剂占据了空位团簇,S值降低了。在退火过程中,对于掺锂的样品,随着S的大大降低,观察到了这些缺陷的主要恢复。与块状ZnO相比,正电子寿命变化表明存在缺陷。当掺入Li / Na / K时,ZnO中的Er掺杂显示出少量的缺陷增加,并逐渐减少,表明共掺杂杂质占据了晶界中的空位。在Er掺杂时,由于制备的ZnO中的Zn型空位,导致193ps的第一寿命分量增加,这证明Er3 +离子替代了Zn2 +,从而由于电荷补偿而产生了点缺陷。退火至800摄氏度时,Li共掺杂的ZnO:Er导致第二寿命tau(2),平均寿命tau(ave)和S值大大降低,这表明Li离子位于Zn空位中。退火的ZnO:Er + Na / K比ZnO:Er + Li导致的缺陷浓度明显增加,这是由于空位迁移形成了簇。从正电子an没特性中详细阐明了缺陷类型,缺陷修饰,Er和共掺杂的Li / Na / K在ZnO中的影响以及它们对退火的影响。

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  • 来源
    《Applied Physics》 |2019年第8期|497.1-497.10|共10页
  • 作者单位

    Univ Tsukuba, Div Appl Phys, Tsukuba, Ibaraki 3058573, Japan;

    Univ Tsukuba, Div Appl Phys, Tsukuba, Ibaraki 3058573, Japan;

    Anna Univ, Dept Phys, MIT Campus, Chennai 600044, Tamil Nadu, India;

    Univ Madras, Dept Nucl Phys, Guindy Campus, Chennai 600025, Tamil Nadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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