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Er~(3+) induced point defects in ZnO and impact of Li~+/Na~+/K~+ on the vacancy defects in ZnO:Er studied by positron annihilation spectroscopy

机译:ER〜(3+)ZnO诱导点缺陷和Li〜+ / Na〜+ / k〜+对ZnO的空位缺陷的影响:ER通过正电子湮没光谱研究

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摘要

The defects species in as-prepared ZnO, Er-doped, and co-doped (with Li/Na/K) nanocrystallites synthesized by combustion method were examined by Positron Annihilation Lifetime (PAL) and Doppler Broadening (DB) spectroscopy. The S and W parameters were derived from positron trapping of valence and core electrons extracted from the central and wing regions of DB spectra to identify the vacancy-type defects. For as-prepared Er-doped ZnO samples, the observed high value of S indicated that the vacancies and vacancy cluster defects were located at the grain surface and two-grain junction. With co-doping of Li/Na/K, theS value was decreased due to the dopant occupying the vacancy clusters. On annealing, the major recovery of such defects was observed with enormous decreasing S for Li co-doped sample. Positron lifetime variations signified the presence of defects compared with bulk ZnO. Er doping in ZnO evidenced a small increase of defects with a gradual decrease when co-doped with Li/Na/K indicating the co-dopant impurity occupied the vacancies in the grain boundary. The first lifetime component of 193ps owing to the Zn-type vacancies in as-prepared ZnO were increased on Er doping, evidencing the replacement of the Zn2+ by Er3+ ion and thereby created point defects due to charge compensation. On annealing to 800 degrees C, Li co-doped ZnO:Er resulted to enormous reduction of second lifetime tau(2), mean lifetime tau(ave), and S value signifying the Li ion localised in Zn vacancy site. Annealed ZnO:Er+Na/K resulted in considerable intensification in defect concentrations than ZnO:Er+Li due to the vacancy migration to form as clusters. The defect type, defect modification, the influence of Er together with co-doped Li/Na/K in ZnO, and their effect on annealing are elucidated in detail from the positron annihilation characteristics.
机译:通过正电子湮没寿命(PAL)和多普勒展宽(DB)光谱检查由燃烧方法合成的制备的ZnO,ER掺杂和共掺杂(用Li / Na / K)纳米晶体的缺陷物种。 S和W参数源自从DB光谱的中央和机翼区域提取的价值和核心电子的正电子捕获,以识别空位型缺陷。对于以制备的ER掺杂的ZnO样品,观察到的高值表明,空位和空位簇缺陷位于晶粒表面和两粒结。对于Li / Na / K的共掺杂,由于掺杂剂占用空位簇,因此值减小。在退火上,观察到这种缺陷的主要恢复,李共掺杂样品巨大降低。正电子寿命变化表示与散装ZnO相比的缺陷的存在。在ZnO中掺杂,当共同掺杂Li / Na / k表示共掺杂剂杂质占据晶粒边界中的空位时,在逐渐减小的缺陷的小幅增加。在ER掺杂上增加了193ps的第一个寿命组件,其由制备的ZnO中的Zn型空位增加,从而通过ER3 +离子替换Zn2 +,从而产生由于电荷补偿而产生的点缺陷。在退火到800℃时,Li共掺杂ZnO:ER导致巨大减少的第二寿命Tau(2),平均寿命Tau(Ave),以及在Zn空位位点局部定位的Li离子的S值。退火ZnO:ER + Na / k导致缺陷浓度的相当大的增强,而不是ZnO:ER +李,由于空位迁移形成为簇。从正电子湮没特性详细阐述了缺陷型,缺陷改性,与共掺杂Li / Na / K的影响以及它们对退火的影响。

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  • 来源
    《Applied Physics》 |2019年第8期|497.1-497.10|共10页
  • 作者单位

    Univ Tsukuba Div Appl Phys Tsukuba Ibaraki 3058573 Japan;

    Univ Tsukuba Div Appl Phys Tsukuba Ibaraki 3058573 Japan;

    Anna Univ Dept Phys MIT Campus Chennai 600044 Tamil Nadu India;

    Univ Madras Dept Nucl Phys Guindy Campus Chennai 600025 Tamil Nadu India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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