Room temperature gas sensor based on porous silicon/metal oxide structure

摘要

N-type TiO_(2-x) and In_2O_3 · SnO_2 thin films were deposited onto p-type porous silicon layer which was formed by common electrochemical anodization. The current-voltage characteristics of obtained structures and sensitivity to different concentrations of hydrogen in air were studied. Measurements were carried out at room temperature. As shown results of measurements, an exponential growth of the current in forward branch of the current-voltage characteristics of the device made of TiO_(2-x) layer was detected. Higher sensitivity to hydrogen of the TiO_(2-x)-porous silicon sensor in comparison to structure made of In_2O_3 · SnO_2 film was detected at room temperature (without preheating of work body of the sensor).