Trench MOSFETs: Large Die, Low Ohmic MOSFETs Cut On-Resistance, Gate Charge

摘要

A new low voltage, 25 to 200V TrenchMOS technology, called SiliconMax, uses the largest die possible that can fit into a standard package. These devices offer very low R_(DS (on)) (on-resistance) and thermal performance that allows high density electronic designs. These devices also offer low gate charge or "Miller" charge, Q_(GD). To understand the importance of these benefits we must discuss the MOSFET's loss mechanisms: conduction, switching and gate drive losses.