机译:低导通电阻SiC沟槽/平面MOSFET,具有降低的截止态氧化物场和低栅极电荷
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong;
Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong;
Dynex Semiconductor Ltd., Lincoln, U.K.;
Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong;
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong;
Logic gates; MOSFET; Silicon carbide; Computer architecture; JFETs; Resistance; Capacitance;
机译:具有低导通电阻和降低的栅极电荷的改进的4H-SiC沟槽栅极MOSFET结构
机译:具有自偏置p屏蔽的SiC沟槽MOSFET,具有低R和低OFF状态的氧化场
机译:沟槽式MOSFET:大裸片,低欧姆MOSFET降低导通电阻,栅极电荷
机译:低导通电阻的4H-SiC沟槽栅极金属氧化物半导体场效应晶体管(UMOSFET)的新颖设计
机译:具有沟槽底部源极触点的高密度,低导通电阻的沟槽横向功率MOSFET。
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:低导通电阻的SiC沟槽/平面MOSFET,具有减少的截止态氧化物场和低栅极电荷
机译:用于军事和商业应用的低导通电阻siC功率mOsFET的开发