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机译:极化和p型掺杂对单独吸收和倍增AlGaN日盲雪崩光电二极管光响应的影响
Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Jiangsu, Peoples R China;
Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Jiangsu, Peoples R China;
Fudan Univ, Lab Adv Mat, Shanghai 200438, Peoples R China;
Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Jiangsu, Peoples R China;
Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Jiangsu, Peoples R China;
AlGaN; Solar blind; Avalanche photodiodes; Photo responsivity; Negative polarization;
机译:n型AlGaN层在分离和吸收(SAM)GaN / AlGaN雪崩光电二极管的光响应机制中的作用
机译:用高低掺杂和异质电荷层的单独吸收和乘法AlGaN太阳盲雪崩光电二极管
机译:使用异质结构作为单独的吸收和倍增区域的高增益N面AlGaN太阳盲雪崩光电二极管
机译:分别吸收和倍增GaN / AlGaN雪崩光电二极管的光响应模拟
机译:具有高速和高带宽积的谐振腔分离吸收和倍增雪崩光电二极管
机译:高紫外线检测效率的4H-SiC分离吸收电荷和倍增雪崩光电二极管结构的优化策略
机译:GaAs / AL0.8GA0.2as单独的吸收和倍增区域X射线光谱雪崩光电二极管