Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

摘要

Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4x 10~(-3) has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 x 10~(15) ions/cm~2 before and after spike annealing at 1075℃. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.