首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Nanostructure and adhesion of electroless-plated Cu film on the self-catalyzed Cu using metal-plasma ion implanter
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Nanostructure and adhesion of electroless-plated Cu film on the self-catalyzed Cu using metal-plasma ion implanter

机译:金属等离子体离子注入机在自催化铜上化学镀铜膜的纳米结构和附着力

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Metal-plasma ion implanter has been used in this research to insert Cu ions as self-catalyst into the sub-surface of the TaN/FSG/Si assembly for electroless-plated Cu film. Cu ions were first implanted using two dosages of 5.0 x 10(16) and 10 X 10(16) cm(-2) at accelerating voltages of 30, 40, and 50 kV.The specimens were characterized by field emission scanning electron microscopy, atomic force microscopy, and mechanical pull-up tests. A noticed relationship between the implanted voltage and the nanostructure of the implanted Cu was established. The effects of the implanted nanostructure related to the adhesion strength of the electroless-plated Cu film were discussed. The adhesion strength of the final electroless-plated Cu film followed with the implanted dosage of 10 X 10(16) cm(-2) is apparently higher than that with the dosage of 5.0 x 10(16) cm(-2) at the same accelerating voltage. The adhesion strength of the Cu films tends to decrease with the increasing accelerating voltages applied for the implantation. An excellent gap-filling capability in a 0.2 mu m width (aspect ratio 7:1) via was obtained. (c) 2005 Elsevier B.V. All rights reserved.
机译:在本研究中,已经使用金属等离子体离子注入机将Cu离子作为自催化剂插入到化学镀Cu膜的TaN / FSG / Si组件的子表面中。首先以30、40和50 kV的加速电压使用5.0 x 10(16)和10 X 10(16)cm(-2)的两种剂量注入Cu离子。通过场发射扫描电子显微镜对样品进行表征,原子力显微镜和机械上拉试验。建立了注入电压与注入铜纳米结构之间的显着关系。讨论了注入的纳米结构与化学镀铜膜的附着强度有关的影响。最终的化学镀Cu膜的附着强度,随后在注入剂量为10 X 10(16)cm(-2)时,明显高于在剂量为5.0 x 10(16)cm(-2)时的附着强度。相同的加速电压。 Cu膜的粘合强度随着用于注入的加速电压的增加而趋于降低。在0.2微米宽度(纵横比为7:1)的通孔中获得了出色的间隙填充能力。 (c)2005 Elsevier B.V.保留所有权利。

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