Photoluminescence study of GaAs implanted with 100 MeV Si-28 ions

摘要

Damage in n-GaAs implanted with 100 MeV Si-28 ions has been investigated using low temperature (T similar to 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10(16) ions m(-2), 10(17) ions m(-2) and 10(18) ions m(-2), respectively and annealed at various temperatures up to 1000 degrees C. A dominant annealing stage is seen at 650 degrees C where the PL begins to recover. PL spectra reveal several features which vary with annealing temperature, fluence and depth. Assignments of the defect structures responsible for the emission peaks are suggested. (c) 2006 Elsevier B.V. All rights reserved.