Effects of oxygen ion beam application on crystalline structures of TiO_2 films deposited on Si wafers by an ion beam assisted deposition

摘要

Polycrystalline titanium oxide (TiO_2) films were deposited on silicon at 600℃ by ion beam assisted deposition. Oxygen gas was ionized with a fraction of 0.0015-0.02 and they were applied to the Si wafers at the energy of 500 eV. Titanium oxide films under larger Ti metal evaporation rates were anatase phase and those under larger O ion beam currents were rutile phase.