Crystalline lattice phase-conversion on thin boron nitride films deposited on silicon wafers by an ion beam assisted deposition method

摘要

Boron nitride (BN) was deposited on (100) silicon wafers by using an ion beam assisted deposition system comprised of an electron beam evaporator and a Kaufman ion source. The intensities of XRD-peaks on turbostratic-BN and IR-peaks on hexagonal-BN increased with increasing nitrogen ion beam energy, and decreased after reached a maximum value on a BN film deposited at 2 keV. On the other hand, a XRD-peak on (100) cubic-BN first was measured on a BN film deposited at 3 keV.