机译:350℃和600℃注入银的6H-SiC中热退火和中子辐照的影响
Physics Department, University of Pretoria, Pretoria, South Africa;
Physics Department, University of Pretoria, Pretoria, South Africa;
Physics Department, University of Pretoria, Pretoria, South Africa;
Laboratory for Microscopy and Microanalysis, University of Pretoria, Pretoria, South Africa;
Saha Institute of Nuclear Physics, Kolkata, India;
RBS; channeling; SEM; implantation; neutron; radiation damage; diffusion; Ag thermal etching;
机译:注入银的6H-SiC的退火和银的扩散
机译:H_2〜+注入6H-SiC中的注入温度和热退火行为
机译:植入后退火期间辐照6H-SiC氦气泡沫和圆盘的演变
机译:利用硅烷环境注入退火技术开发600-850 V 6H-SiC LDMOS晶体管的研究
机译:热退火和离子辐照对HT-9铁素体钢(组织,腔,TEM,位移环,横截面)的微观结构的影响。
机译:注入后退火过程中辐照的6H-SiC中氦气气泡和圆盘的演变
机译:后植入退火过程中辐照6H-siC中氦气泡和圆盘的演变
机译:常规使用银 - 钴活度比法测定大中子剂量辐射的地热指数