Annealing of silver implanted 6H-SiC and the diffusion of the silver

摘要

Annealing and diffusion behavior of implanted silver in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS), channeling, Raman spectroscopy and scanning electron microscopy (SEM) techniques. Silver (~(109)Ag~+) ions with an energy of 360 keV were implanted in SiC to a fluence of 2 × 10~(16)cm~(-2) at room temperature (23 ℃), 350 and 600 ℃ After implantation the samples were annealed at temperatures up to 1400 ℃. The results revealed that implantation at room temperature created an amorphous layer of about 270 nm from the surface while implantation at 350 and 600 ℃ retained a crystalline structure with more damage created for 350 ℃ implantation compared to 600 ℃ Diffusion of implanted Ag accompanied by loss from the surface started at 1300 ℃ in the amorphous SiC with no diffusion observed in the crystalline SiC. A new model explaining this diffusion of silver accompanied silver loss is presented.