Ion distribution and electronic stopping power for Au ions in silicon carbide

摘要

Accurate knowledge of ion distribution and electronic stopping power for heavy ions in light targets is highly desired due to the large errors in prediction by the widely used Stopping and Range oflons in Matter (SRIM) code. In this study, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are used as complementary techniques to determine the distribution of Au ions in SiC with energies from 700 keV to 15 MeV. In addition, a single ion technique with an improved data analysis procedure is applied to measure the electronic stopping power for Au ions in SiC with energies up to ～70 keVucleon. Large overestimation of the electronic stopping power is found by SRIM prediction in the low energy regime up to ～50 keVucleon. The stopping power data and the ion ranges are crosschecked with each other and a good agreement is achieved.