Deterioration and recovery effects in energy responses of semiconductor X-ray detectors due to nuclear-fusion produced neutron irradiation

摘要

Effects of neutron irradiation on X-ray energy responses of silicon semiconductor detectors have been investigated. Neutron irradiation experiments were carried out for n-type photodiode arrays utilized in the Joint European Torus (JET) using deuterium (D) beam-injection into a tritium (T) target for a well-calibrated deuterium-tritium (D-T) fusion neutron production at the Fusion Neutronics Source (FNS) facility of Japan Atomic Energy Research Institute. X-ray energy responses of these detectors are characterized before and after irradiation by the use of synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory of High Energy Accelerator Research Organization (KEK). A recovery of the degraded X-ray energy response after the neutron irradiation has been found at fluences beyond around 10~(13) neutrons/cm~2. A further novel finding is followed as a "re-degradation" by a neutron irradiation level over about 10~(14) neutrons/cm~2. This "non-linear response" may be physically interpreted in terms of a type inversion from n-to p-type silicon in the detectors. Long-term observations of X-ray energy responses of the detectors after neutron irradiation have also been made in order to clarify the "annealing effect".