Full-size monolithic active pixel sensors in SOI technology - Design considerations, simulations and measurements results

摘要

The paper addresses development of full-size monolithic active pixel detectors exploiting silicon-on-insulator (SOI) technology for the integration of a radiation detector and readout electronics in one entity. A general overview of the sensor design is presented and then considerations of the interaction between the readout and sensitive part of the SOI active sensor are discussed. The layout solution used in the design of the full-size prototypes to overcome the problem of the crosstalk between the readout electronics and the detector are reported. Preliminary measurements results of the first full-size prototypes of SOI sensors are also reported. (c) 2006 Elsevier B.V. All rights reserved.