Photosensitive element, active pixel sensor element, active pixel sensor photosensitive element and active pixel sensor device

摘要

An active pixel sensor photosensitive device according to the present invention has an extremely thin virtual pinning layer formed by inverting the semiconductor material at the surface of the photosensitive area. This ultra thin pin layer improves the blue light response. The inverted pinned layer is formed by applying a negative electric power to the transparent conductive layer, which is preferably located on the entire area of the photosensitive area, and is preferably made of indium-tin-oxide. The conductive layer is electrically separated from the photosensitive region by the thin film insulating layer. The connection to the pinned layer is made through a coupling region formed in the region not covered by the conductive layer and the insulating layer. The red light response is improved, and the depth of the strained layer made of germanium silicon is formed deep within the photosensitive region. The strained layer has a modified bandgap that increases the absorption of red light.