Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices

摘要

N-type epitaxial layers of 72 μm thickness and a resistivity of 150 Ω cm have been grown on highly Sb-doped Cz-substrates at ITME (Warsaw). The diode processing was performed at CiS-Erfurt. For comparison a batch of 280 μm thick n-type MCz wafers with a resistivity of ＞ 600 Ω cm from Okmetic (Finland) was added to the process run. Depth profiles of the oxygen and carbon concentration were measured via the SIMS-method on as grown epi-layers and after different device-process steps at CiS including an oxygen enrichment at 1100 ℃ for 24 h. For the MCz material the profiles were measured on untreated samples and after the full device process. Irradiation runs were performed with neutrons at the TRIGA reactor of Ljubljana up to a fluence value of 10~(16)cm~(-2). The development of the macroscopic device parameters (effective doping concentration and charge collection for α-particles) as function of fluence is presented for the standard and oxygenated epi-devices and compared with the MCz-diodes. The results are discussed in the frame of defect studies resulting from TSC-measurements.