Studies of radiation damage by 900 MeV electrons on standard and oxygen enriched silicon devices

摘要

To investigate the radiation hardness of standard and oxygen enriched silicon devices with respect to high energy electrons (900 MeV), an irradiation experiment has been performed at Elettra, the synchrotron facility in Trieste (Italy). No significant differences have been observed in the electrical parameters of oxygenated and standard structures after the irradiation up to a fluence of about 4.5 x 10~(14) cm~(-2) for what concerns the full depletion voltage variations and the increase of the reverse leakage current. Only the reverse annealing of the full depletion voltage appears to benefit somewhat from the oxygenation of silicon substrate. These results seem to indicate that for irradiation with high energy electrons there is no clear advantage in using oxygen enriched silicon wafers up to very high fluence values.