首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >CMOS monolithic active pixel sensors (MAPS) for scientific applications: Some notes about radiation hardness
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CMOS monolithic active pixel sensors (MAPS) for scientific applications: Some notes about radiation hardness

机译:用于科学应用的CMOS单片有源像素传感器(MAPS):关于辐射硬度的一些注意事项

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Invented in the early 1990s on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging device, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started from low-end applications, like for example web cams and is slowly pervading the high-end applications, like for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will briefly review the main results on radiation hardness for monolithic active pixel sensors.
机译:CMOS技术中的单片有源像素传感器(MAPS)于1990年代初在大西洋两岸发明,今天是销量最大的固态成像设备,超过了传统的电荷耦合器件(CCD)技术。 CMOS MAPS的缓慢吸收始于低端应用(例如网络摄像头),并且正慢慢普及到高端应用(例如,专业数码相机)。科学应用需要更高的规格:非常低的噪声,高速,高动态范围,大幅面和辐射硬度是其中的一些要求。本文将简要回顾单块有源像素传感器在辐射硬度方面的主要结果。

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