Monolithic pixel detectors in a deep submicron SOI process

摘要

Fermilab. PO BOX 500. MS 222, Batavia, 1L 60510-5011, USA;%A compact charge-signal processing chain, composed of a two-stage semi-Gaussian preamplifier-signal shaping filter, a discriminator and a binary counter, implemented in a prototype pixel detector using 0.20 μm CMOS silicon-on-insulator process, is presented. The gain of the analog chain was measured 0.76 V/fC at the signal peaking time about 300 ns and the equivalent noise charge referred to the input of 80e‐.