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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >A new practical model of an objective lens with assembling clearance for transmission electron microscope
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A new practical model of an objective lens with assembling clearance for transmission electron microscope

机译:透射电子显微镜具有装配间隙的物镜的新实用模型

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摘要

A new objective lens model including magnetic pole pieces, coil windings, magnetic circuit as well as the assembling clearance between the pole piece and magnetic circuit is developed to obtain high simulation precision. The calculation is based on the second-order finite element method (SOFEM) with the measured B-H magnetization curves of the lens materials. The magnetic pole pieces and magnetic circuit are firstly optimized to reduce the lens saturation and obtain minimum spherical aberration coefficient, then modified to release the magnetic flux leakage caused by the increased clearance. In the end, an example is given for a 200 kVTEM with the point resolution of 0.25 nm and off-axis aberration coefficients at the image plane are calculated for dynamic correction. Results show that the magnetic circuit is unsaturated and the saturated area is only 0.8 x 4.8 mm2 around the lower pole piece with a maximum magnetic flux density of 2.537 T. This model can reduce the magnetic flux leakage and obtain the point resolution with smaller excitation. The calculation also shows that the off-axis aberrations require correcting dynamically to acquire fine image quality under low system magnification.
机译:开发了一种新的物镜模型,该模型包括磁极片,线圈绕组,磁路以及极片与磁路之间的装配间隙,以实现较高的仿真精度。该计算基于二阶有限元方法(SOFEM),并使用测得的镜片材料的B-H磁化曲线。首先对磁极片和磁路进行优化,以降低透镜饱和度并获得最小的球差系数,然后对其进行修改,以释放由于间隙增加而引起的磁通量泄漏。最后,给出了一个200 kVTEM的示例,其点分辨率为0.25 nm,并计算了像面上的轴外像差系数以进行动态校正。结果表明,磁路是不饱和的,下极片周围的饱和区域仅为0.8 x 4.8 mm2,最大磁通密度为2.537T。该模型可以减少磁通泄漏,并以较小的激励获得点分辨率。计算还表明,离轴像差需要动态校正才能在低系统放大倍率下获得良好的图像质量。

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  • 作者单位

    Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education). School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;

    Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education). School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;

    Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education). School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;

    Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education). School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;

    Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education). School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    assembling clearance; second-order finite element method; magnetic saturation effect; asymmetric magnetic flux leakage;

    机译:装配间隙;二阶有限元法;磁饱和效应;不对称磁通泄漏;

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