Cross-sectional transmission electron microscopy analysis of a single self-assembled quantum dot single electron transistor fabricated by atomic force microscope local oxidation

摘要

We show a cross-sectional transmission electron microscopy (TEM) analysis of a single electron transistor (SET) composed of a nanogap electrode fabricated by atomic force microscope (AFM) local oxidation and a single self-assembled quantum dot (QD). The detail structure of SET is analyzed by using both TEM and in-situ energy dispersive X-ray spectroscopy (EDX) measurement. It demonstrates that after AFM lithography, the QD in the SET maintained its high crystal quality and without notable damage or oxidation. Our findings demonstrate the good controllability and reliability of the AFM local oxidation method for fabricating nanogap electrode on a single QD.