机译:DLTS研究重离子辐照的硅NPN双极结型晶体管中缺陷的偏置依赖性
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
bipolar junction transistors; radiation damage; deep level transient spectroscopy; cain degradation;
机译:重离子辐照的NPN硅双极结型晶体管的退火效应和DLTS研究
机译:各种能量的硅离子辐照的NPN双极结型晶体管的辐射损伤和缺陷
机译:DLTS研究锂离子辐照双极结晶体管的深层缺陷
机译:2-MeV电子辐照在npn Si双极晶体管中辐射诱导的晶格缺陷的剂量率依赖性和性能下降
机译:RF 4H-碳化硅npn双极结晶体管的设计,分析和实验研究。
机译:电化学传感器中场效应晶体管和双极结晶体管作为传感器的比较
机译:DLTs研究锂离子辐照双极结晶体管的深能级缺陷
机译:采用蓝宝石硅制造的垂直NpN双极结晶体管