A bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor

摘要

The present invention relates to a semiconductor device manufacturing method, the semiconductor manufacturing method of silicon on the collector- germanium by epitaxial growth step of the base syeoljeok ; Germanium in the upper region of the base - oxidizing thermally the base to form a concentrated area in order to grow the silicon dioxide selectively to the upper surface of the base; Removing the silicon dioxide ; And already includes the step of depositing the emitter is placed on the base .