• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Radiation hardness of silicon photomultipliers under ~(60)Co γ-ray irradiation
【24h】

Radiation hardness of silicon photomultipliers under ~(60)Co γ-ray irradiation

机译：〜（60）Coγ射线辐照下硅光电倍增管的辐射硬度

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Radiation damage in silicon photomultipliers (SiPM) caused by exposure to ~(60)Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
机译：实验评估和讨论了由于暴露于〜（60）Coγ射线引起的硅光电倍增管（SiPM）的辐射损伤。 SiPM器件的辐照剂量最大为9.4 kGy。将SiPM像素之间的暗电流，暗计数率，增益，单光子计数能力和串扰概率作为照射剂量的函数进行评估。

著录项

  • 来源
  • 作者

    R. Pagano; S. Lombardo; F. Palumbo; D. Sanfilippo; G. Valvo; G. Fallica; S. Libertino;

  • 作者单位

    Istituto per la Microelettronica e Microsistemi, Zona Industrials, Ottava Strada, 5, 95121, Catania, Italy;

    Istituto per la Microelettronica e Microsistemi, Zona Industrials, Ottava Strada, 5, 95121, Catania, Italy;

    Department of Materials Science and Engineering, Technion - Israel Institute of Technology, 32000, Haifa, Israel;

    STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy;

    STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy;

    STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy;

    Istituto per la Microelettronica e Microsistemi, Zona Industrials, Ottava Strada, 5, 95121, Catania, Italy;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon photomultiplier; Radiation damage; Radiation hardness; Gamma rays;

    机译：硅光电倍增管;辐射损伤;辐射硬度;伽马射线;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号