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Recent results with HV-CMOS and planar sensors for the CLIC vertex detector

机译:用于CLIC顶点检测器的HV-CMOS和平面传感器的最新结果

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The physics aims for the future multi-TeV e~e_- Compact Linear Collider (CLIC) impose high precision requirements on the vertex detector which has to match the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of 3 μm, 10 ns time stamping capabilities, low mass (~0.2% X_o per layer), low power dissipation and pulsed power operation. Recent results of test beam measurements and Geant4 simulations for assemblies with Timepix3 ASICs and thin active-edge sensors are presented. The 65 nm CLICpix readout ASIC with 25 μm pitch was bump bonded to planar silicon sensors and also capacitively coupled through a thin layer of glue to active HV-CMOS sensors. Test beam results for these two hybridisation concepts are presented.
机译:物理学的目标是未来的多TeV e_e_-紧凑型线性对撞机(CLIC)对顶点检测器提出高精度要求,该检测器必须与实验条件相匹配,例如碰撞的时间结构和光束感应的存在背景。主要的挑战是:3μm的点分辨率,10 ns的时间戳能力,低质量(每层约0.2%X_o),低功耗和脉冲功率操作。给出了使用Timepix3 ASIC和薄型有源边缘传感器的组件的测试光束测量和Geant4仿真的最新结果。间距为25μm的65 nm CLICpix读出ASIC被凸点键合到平面硅传感器,并且还通过薄胶层与有源HV-CMOS传感器电容耦合。给出了这两个杂交概念的测试光束结果。

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