Multilayer ZnO/Pb/G thin film based extended gate field effect transistor for low dose gamma irradiation detection

摘要

This study demonstrates the shifts in the threshold voltage ((ΔV_(TH)) of a fabricated extended gate field effect transistor (EGFET) induced by low-dose gamma irradiation as a detection procedure for the collective irradiation dose detection. A metal oxide semiconductor field effect transistor (MOSFET) under ionizing irradiation generates electron-hole (e~--h~+) pairs within the oxide layer. These massive holes confined inside the oxide layer owing to their low mobility and produce excess charge. Consequently, the characteristics of the MOSFET and V_(TH) (turn on) are altered, which is detrimental to the transistor's operation unless inhibited. To resolve this issue, chemical bath deposition was used to grow a multilayer ZnO/Pb/G thin film to assess the feasibility of achieving a low dose gamma (Co-60) irradiation detector. The morphology and structure of the as-prepared film were analyzed using FESEM, XRD, and UV-Vis absorption measurements. The irradiation dose-dependent V_(TH)traits of the ZnO/Pb/G film-based EGFET were found to be linear. Further, it is established that the simple, rapid, low-cost and eco-friendly technique for the extended gate fabrication may constitute a basis for the development of low doses (up to 12.98 μSv) gamma irradiation dosimetry.