Lifetime of Minority Charge Carriers in InGaAs-Based Structures

摘要

Triple and quaternary solutions of materials of the A(3)B(5) group, InGaAs arsenides and InGaAsP phosphides, are used in modern devices for the short-wave infrared range of the spectrum for various purposes. In this paper, we perform estimates and modeling of lifetime in A(3)B(5) structures in accordance with the three fundamental generation-recombination mechanisms: radiative, Auger, and Shockley-Reed-Hall. Based on the estimates, lifetime in the In0.53Ga0.47As material of n-type conductivity in the concentration range of 10(13)-10(17) cm(-3) is 10(-5) to 4.5 x 10(-4) s, which allows high photoelectric parameters.