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Acoustic higher-order topological insulator on a kagome lattice

机译:舞果格上的高阶声拓扑绝缘子

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Higher-order topological insulators(1-5) are a family of recently predicted topological phases of matter that obey an extended topological bulk-boundary correspondence principle. For example, a two-dimensional (2D) second-order topological insulator does not exhibit gapless one-dimensional (1D) topological edge states, like a standard 2D topological insulator, but instead has topologically protected zero-dimensional (0D) corner states. The first prediction of a second-order topological insulator(1), based on quantized quadrupole polarization, was demonstrated in classical mechanical(6) and electromagnetic(7,8) metamaterials. Here we experimentally realize a second-order topological insulator in an acoustic metamaterial, based on a 'breathing' kagome lattice(9) that has zero quadrupole polarization but a non-trivial bulk topology characterized by quantized Wannier centres(2,9,10). Unlike previous higher-order topological insulator realizations, the corner states depend not only on the bulk topology but also on the corner shape; we show experimentally that they exist at acute-angled corners of the kagome lattice, but not at obtuse-angled corners. This shape dependence allows corner states to act as topologically protected but reconfigurable local resonances.
机译:高阶拓扑绝缘体(1-5)是遵循扩展的拓扑体-边界对应原理的物质的最近预测拓扑相族。例如,二维(2D)二阶拓扑绝缘体不像标准2D拓扑绝缘体那样表现出无间隙的一维(1D)拓扑边缘状态,而是具有拓扑保护的零维(0D)角状态。在经典的机械(6)和电磁(7,8)超材料中证明了基于量化的四极极化的二阶拓扑绝缘体(1)的第一预测。在此,我们基于``呼吸''的kagome晶格(9)在声学超材料中实验性地实现了二阶拓扑绝缘体,该晶格具有零四极极化但具有以量化的Wannier中心为特征的非平凡的体拓扑(2,9,10) 。与以前的高阶拓扑绝缘子实现不同,拐角状态不仅取决于整体拓扑,而且取决于拐角形状。我们通过实验证明它们存在于kagome晶格的锐角拐角处,而不存在于钝角拐角处。这种形状相关性允许拐角状态充当拓扑保护但可重构的局部共振。

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  • 来源
    《Nature Materials》 |2019年第2期|108-112|共5页
  • 作者单位

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore;

    Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Hangzhou, Zhejiang, Peoples R China|Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou, Zhejiang, Peoples R China;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore|Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore, Singapore;

    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore|Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore, Singapore;

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