首页> 外文期刊>Microelectronics & Reliability >Reliability of Flip Chip Applications with Ceramic and Organic Chip Carriers
【24h】

Reliability of Flip Chip Applications with Ceramic and Organic Chip Carriers

机译:陶瓷和有机芯片载体的倒装芯片应用的可靠性

获取原文
获取原文并翻译 | 示例

摘要

The paper deals with four primary failure mechanisms, namely thermomechanical fatigue, electromigration, thermomigration, and cyclic creep, listed in order of severity in terms of their effect on the reliability of flip-chip solder joints as well as second-level packaging interconnections. It is basically a tutorial review of the mechanisms and the reliability-models, developed semi-empirically over the years, based on experimental data obtained under accelerated conditions and on the physics of the mechanisms. The models apply to any solder joint and chip carrier combination, however each solder/chip carrier system is characterized by different parameters which depend on the process, materials, and design, reflecting the solder and package properties. While fatigue and creep depend on the package materials and structure, electromigration and thermomigration are practically independent of the chip carrier and other package components, thus the models and characteristic parameters applying to these two mechanisms are valid for ceramic, glass ceramic, and organic chip carriers, and the characteristic parameters vary only for different solders, i.e., activation energy, current-density exponent. Besides temperature which affects all given mechanisms, the number of cycles or the time-to-failure depend on C4 shear strain and cycle frequency (fatigue), current density (electromigration), thermal gradient (thermomigration), and load, shear-strain and frequency (creep).There are other factors that influence fatigue, such as chip underfill, hermeticity, and temperature mini-cycles which are not part of this paper but which are mentioned in the text with respect to their relative effect on fatigue.
机译:本文讨论了四种主要的故障机制,即热机械疲劳,电迁移,热迁移和循环蠕变,按照其对倒装芯片焊点以及二级封装互连的可靠性的影响,按严重性顺序列出。它基本上是对机构和可靠性模型的教程复习,这些年来,这些机构是基于加速条件下获得的实验数据以及机构的物理原理,历年来半经验地开发的。该模型适用于任何焊点和芯片载体的组合,但是每种焊料/芯片载体系统的特征均取决于工艺,材料和设计的不同参数,这些参数反映了焊料和封装的特性。尽管疲劳和蠕变取决于封装材料和结构,但电迁移和热迁移实际上与芯片载体和其他封装组件无关,因此,应用于这两种机制的模型和特征参数对于陶瓷,玻璃陶瓷和有机芯片载体均有效。 ,并且特性参数仅针对不同的焊料而变化,即活化能,电流密度指数。除了影响所有给定机制的温度外,循环次数或失效时间还取决于C4剪切应变和循环频率(疲劳),电流密度(电迁移),热梯度(热迁移)以及负载,剪切应变和频率(蠕变)还有其他影响疲劳的因素,例如芯片底部填充,气密性和温度小循环,这些都不在本文中,但在本文中已提及它们对疲劳的相对影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号