Threshold voltage instability characteristics of HfO_2 dielectrics n-MOSFETs

摘要

In this paper, the threshold voltage instability characteristics of HfO_2 high-k dielectric are discussed. The results from various stress bias conditions including DC and AC with variations of frequency, duty cycle, and polarity provide additional insights into the intrinsic behavior and the trapping dynamics of high-k materials. A reduced threshold voltage shift was observed at higher frequency and lower duty cycle under AC positive unipolar stress compared to DC stress. Similarly, the degradation of maximum transconductance was also reduced with AC stress. However, subthresh-old swing changes were found to be negligible and fairly independent of stress frequencies and duty cycles under AC positive unipolar stress. When different polarity of stress, such as positive, negative, and bipolar stress was applied, it was observed that frequency and duty cycle dependencies were still valid in all three conditions. In contrast to positive stress, negative stress showed a decrease in the threshold voltage shift. Bipolar stress resulted in the highest threshold voltage instability, but the degradation in transconductance and subthreshold swing was actually smaller than those in negative unipolar stress. The bulk trap of HfO_2 dielectric, which is proportional to its physical thickness, is believed to be the primary factor for threshold voltage shift. AC unipolar operation would allow a higher 10-year lifetime operating voltage than the DC condition. In addition to experimental results, a plausible mechanism has been proposed.