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Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC_(60) films

机译:过渡金属-富勒烯化合物TiC_(60)薄膜的纳米结构特征和电子场发射特性

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摘要

Transition-metal compound TiC_(60) thin films were grown by co-deposition from two separated sources of fullerene C_(60) powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C_(60) structure with certain amount of sp~3 bonds and a rough surface with a large number of nanoclusters. z-V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm~2 and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE, The respective field enhancement factors are estimated to be 99-355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC_(60) thin films can be ascribed to structural variation of C_(60) in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C_(60) matrix.
机译:通过从两个分离的富勒烯C_(60)粉末和钛源中共沉积生长过渡金属化合物TiC_(60)薄膜。通过拉曼光谱,原子力显微镜和扫描隧穿光谱研究薄膜的结构性能,发现薄膜具有一定的sp〜3键和一定数量的sp〜3键的C_(60)结构变形,表面具有大量的纳米团簇。 。 z-V隧穿光谱学测量表明,当针尖穿透薄膜时,会涉及几种电荷传输机制。常规场电子发射(FEE)测量显示出10 mA / cm〜2的高发射电流密度和小于8 V /μm的低导通场,对于低场区域和场强,场增强因子分别为659和1947。高场区域。通过利用STM隧道光谱技术,与传统的FEE相比,纳米级的局部FEE也得到了表征。对于从36到6 nm的间隙,各个场增强因子估计为99-355。 TiC_(60)薄膜增强的FEE可以归因于薄膜中C_(60)的结构变化以及嵌入C_(60)基质中的钛纳米晶体形成的导电路径。

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