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Microstructural Effect on the Enhancement of FieldElectron Emission Properties of Nanocrystalline Diamond Films by Li-IonImplantation and Annealing Processes

机译:微观结构对场增强的影响锂离子纳米晶金刚石薄膜的电子发射特性植入和退火工艺

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摘要

The impact of lithium-ion implantation and postannealing processes on improving the electrical conductivity and field electron emission (FEE) characteristics of nitrogen-doped nanocrystalline diamond (nNCD) films was observed to be distinctly different from those of undoped NCD (uNCD) films. A high-dose Li-ion implantation induced the formation of electron trap centers inside the diamond grains and amorphous carbon (a-C) phases in grain boundaries for both types of NCD films. Postannealing at 1000 °C healed the defects, eliminated the electron trap centers, and converted the a-C into nanographitic phases. The abundant nanographitic phases in the grain boundaries of the nNCD films as compared to the uNCD films made an interconnected path for effectual electron transport and consequently enhanced the FEE characteristics of nNCD films.
机译:观察到锂离子注入和后退火工艺对改善氮掺杂纳米晶金刚石(nNCD)膜的电导率和场电子发射(FEE)特性的影响与未掺杂NCD(uNCD)膜明显不同。对于两种类型的NCD膜,大剂量的锂离子注入都会在金刚石晶粒内部形成电子陷阱中心,并在晶界形成非晶碳(a-C)相。 1000°C的后退火可以修复缺陷,消除电子陷阱中心,并将a-C转变为纳米石墨相。与uNCD薄膜相比,nNCD薄膜晶界中丰富的纳米石墨相成为有效电子传输的相互连接的路径,因此增强了nNCD薄膜的FEE特性。

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