首页> 外文期刊>ACS Omega >Microstructural Effect on the Enhancement of Field Electron Emission Properties of Nanocrystalline Diamond Films by Li-Ion Implantation and Annealing Processes
【24h】

Microstructural Effect on the Enhancement of Field Electron Emission Properties of Nanocrystalline Diamond Films by Li-Ion Implantation and Annealing Processes

机译:锂离子注入和退火工艺增强纳米晶金刚石薄膜场电子发射性能的微观结构效应

获取原文
           

摘要

The impact of lithium-ion implantation and postannealing processes on improving the electrical conductivity and field electron emission (FEE) characteristics of nitrogen-doped nanocrystalline diamond (nNCD) films was observed to be distinctly different from those of undoped NCD (uNCD) films. A high-dose Li-ion implantation induced the formation of electron trap centers inside the diamond grains and amorphous carbon (a-C) phases in grain boundaries for both types of NCD films. Postannealing at 1000 °C healed the defects, eliminated the electron trap centers, and converted the a-C into nanographitic phases. The abundant nanographitic phases in the grain boundaries of the nNCD films as compared to the uNCD films made an interconnected path for effectual electron transport and consequently enhanced the FEE characteristics of nNCD films.
机译:观察到锂离子注入和后退火工艺对改善氮掺杂纳米晶金刚石(nNCD)膜的电导率和场电子发射(FEE)特性的影响与未掺杂NCD(uNCD)膜明显不同。对于两种类型的NCD膜,大剂量的锂离子注入都会在金刚石晶粒内部形成电子陷阱中心,并在晶界形成非晶碳(a-C)相。 1000°C的后退火可以修复缺陷,消除电子陷阱中心,并将a-C转变为纳米石墨相。与uNCD薄膜相比,nNCD薄膜晶界中丰富的纳米石墨相成为有效电子传输的相互连接的路径,因此增强了nNCD薄膜的FEE特性。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号