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Lattice Boltzmann method study of effect three dimensional stacking-chip package layout on micro-void formation during encapsulation process

机译:格子Boltzmann方法研究三维堆叠芯片封装对封装过程中微孔形成的影响

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The current study applied the lattice Boltzmann method to examine the effects of stacking chips layout to the micro-void formation in three-dimensional (3D) packaging. Three-dimensional 19-velocities commonly known as D3Q19 scheme is utilized in this study. Three different cases, which are different in layout design, are examined. For code verification purpose, an experimental work is also presented to compare the flow front results between numerical and experimental at different filling percentage. The numerical predictions compared well with the experimental results. Minor differences are observed in their flow front profile. The numerical findings identified the predicted locations of micro-void formation during the encapsulation process. The entrapment of micro-void was visualized clearly in the simulation because of the unbalanced molecular force at the interface during encapsulation. Knit lines were also identified at the interface between the flows that occurred in the encapsulation. Different layout of stacking flip-chips package have influence the micro-void in the package, which tended to form at the stacking chips region. The results show that the lattice Boltzmann method has a good performance in the IC encapsulation simulation. (C) 2016 Elsevier Ltd. All rights reserved.
机译:当前的研究应用格子Boltzmann方法来检查堆叠芯片布局对三维(3D)包装中微孔形成的影响。这项研究中使用了通常被称为D3Q19方案的三维19速度。研究了布局设计不同的三种不同情况。为了进行代码验证,还提出了一项实验工作,以比较不同填充百分比下的数值和实验之间的流锋结果。数值预测与实验结果进行了比较。在它们的流动前沿轮廓上观察到较小的差异。数值发现确定了包封过程中微孔形成的预测位置。由于在封装过程中界面处的分子力不平衡,因此在模拟中可以清楚地看到微孔的截留。还可以在封装中发生的流之间的界面处识别出编织线。堆叠倒装芯片封装的不同布局影响了封装中的微孔,该微孔倾向于在堆叠芯片区域形成。结果表明,晶格Boltzmann方法在IC封装仿真中具有良好的性能。 (C)2016 Elsevier Ltd.保留所有权利。

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