Application of l/f noise measurements to the characterization of near-interface oxide traps in ULSI n-MOSFETs

摘要

1/f noise analysis is a promising method for estimating the density of near-interface states in small size metal- oxide semiconductor field effect transistor (MOSFET)s. as it does not require large-area devices and is not too sensitive to periphery effects. However, the applicability of the method to practical devices and the accuracy of the results obtained have not often been discussed in the literature. ln this work, we report on the characterization of ultra-large-scale of integration (ULSI) n-MOSFETs with a heavy channel doping and a gate oxide fabricated with both a standard thermal oxide and an N_2O-nitrided technology. We address the impact of channel quantization and mobility fluctuations on the 1/f results. The precision of the method is assessed by comparison with results obtained from conventional C-v measurements.